Available For Licensing: High-Quality Actinide Thin Films Via Molecular Beam Epitaxy For Quantum And Optoelectronic Devices

  Address - United States

  Contact details - 565656565

  Tender notice no. - 76454545

  GT Ref Id - 120884203

  Document Type - Tender Notices

Description - Description: High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices Description Researchers at INL have developed a process to deposit high-quality epitaxial crystalline thin films of uranium and thorium, a s well as their nitrides, using molecular beam epitaxy (MBE). MBE is a non-equilibrium vacuum deposition technique that provides precise control over the composition and interfaces of the material, making it ideal for fabricating high-purity, defect-free, single-crystalline thin films. Actinide thin films, particularly those of uranium and thorium, present significant challenges for ab initio modeling due to their complex electron correlations. H

Gt Ref Id - 120884203

Deadline - Nov 15, 2025