Automated Endpoint Detection Of Copper Electrodeposition In Through-Silicon Vias (Tsvs)

  Address - United States

  Contact details - 565656565

  Tender notice no. - 76454545

  GT Ref Id - 81556004

  Document Type - Tender Notices

Description - Background Information: For 3D, and heterogeneous integration (HI) of microelectronics devices, void-free copper (Cu)-filled TSVs are a critical technology. Cu overburden or over-plating, typically resulting from excess Cu electroplating on the surfa ce often included to overcome process marginality, requires subsequent removal steps, generally by chemical mechanical polishing (CMP). In general, more overburden requires longer CMP resulting in a loss of throughput and a higher consumption of consumable chemistries and polishing pads. Utilizing current and voltage transient signatures during the electrochemical deposition, Sandia has developed and filed for patent protection on automated endpo

Gt Ref Id - 81556004

Deadline - May 31, 2024