4H-Sic Silicon Carbide (Sic) Integrated Circuit Processing On 100 Mm Diameter Sic Wafers

  Address - United States

  Contact details - 565656565

  Tender notice no. - 76454545

  GT Ref Id - 112160564

  Document Type - Tender Notices

Description - Description: You are invited to submit a proposal in response to the National Aeronautics and Space Administration (NASA) Glenn Research Center’s Fabrication of 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafer s solicitation. The principal purpose of this requirement is to provide an integrated silicon carbide (SiC) device structures, specifically JFETs and resistors, on NASA-supplied 100 mm 4H-SiC wafers, following the “Gen. 12b” process flow and using NASA-provided design files. NASA will conduct this acquisition as a full and open competition. The North American Industry Classification System (NAICS) code for this acquisition is 541715, with a s

Gt Ref Id - 112160564

Deadline - Jul 28, 2025