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Most trusted source for Tendering Opportunities and Business Intelligence since 2002
Country - United States
Summary - Gallium Nitride Diode Wafer Fabrication
Deadline - login to view
GT reference number - 112160462
Product classification - Research and development consultancy services
Address - United States
Contact details - 565656565
Tender notice no. - 76454545
GT Ref Id - 112160462
Document Type - Tender Notices
Description - Description: NASA Glenn Research Center (GRC) has a requirement for a dedicated Gallium Nitride wafer fabrication run to provide 7000 high performance Schottky diodes for integration in high power Rectenna arrays operating at 10 GHz and above. These diodes must meet highly specific qualifications and produce cutting edge performance to enable high-frequency, high-power and high-efficiency power rectification. The device performance requirements outlined in the Statement of Work include global cut-off frequency, return loss, junction capacitance, operational power handling, current handling, and high-temperature operation. These devices must already exist in the vendors catalog and device mea
Gt Ref Id - 112160462
Deadline - Jul 14, 2025
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